By Topic

Model for the Resistive Switching Effect in  \hbox {HfO}_{2} MIM Structures Based on the Transmission Properties of Narrow Constrictions

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Miranda, E.A. ; Escola Tec. Super. d''Eng., Univ. Autonoma de Barcelona, Bellaterra, Spain ; Walczyk, Christian ; Wenger, C. ; Schroeder, Thomas

A physics-based analytical model for the current-voltage (I-V) characteristics corresponding to the low and high resistive states in electroformed metal-insulator-metal structures with HfO2 layers is proposed. The model relies on the Landauer theory for the electron transport in mesoscopic systems. The switching phenomenon is ascribed to the modulation of the constriction's bottleneck cross-sectional area associated with atomic rearrangements within the confinement path. The extracted parameter values allow one to conclude that the length and radius of the region that controls the conduction characteristics are in the nanometer range.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 6 )