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Browse Journals & Magazines > Applied Physics Letters ...> Volume:96 Issue:16 Help

Photoinduced charge-trapping phenomena in metal/high-k gate stack structures studied by synchrotron radiation photoemission spectroscopy

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8 Author(s)
Tanimura, T. ; Department of Applied Chemistry, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan ; Toyoda, S. ; Kamada, H. ; Kumigashira, H.
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We have demonstrated photoinduced charge-trapping phenomena in metal/high-k gate stack structures using time-dependent photoemission spectroscopy with synchrotron radiation. Pt metal gate electrode with a large work function releases trapped negative charges near the surface of the HfSiON film while TiN metal gate electrode with a lower work function keeps negative charges in the HfSiON film. The release of negative trapped charges reveals a possibility of positive charge trapping at the interface in the HfSiON film. The location of energy level for negative charges is concluded to be between Pt and TiN Fermi-level in the band gap of the HfSiON film.

Published in:
Applied Physics Letters  (Volume:96 ,  Issue: 16 )

Date of Publication: Apr 2010

Page(s):
162902 - 162902-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.3409162
Product Type:
Journals & Magazines
Date of Current Version :
26 April 2010
Issue Date :
Apr 2010

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