By Topic

Postannealing effect on properties of hydrogenated amorphous Si(Mn) magnetic semiconductors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Yao, Jia-Hsien ; Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan 30013, Republic of China ; Chen, Ming-Yuan ; Tsai, Jai-Lin ; Lan, Ming-Der
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3352928 

Postannealing effect was studied on films of hydrogenated amorphous silicon with Mn addition grown by magnetron cosputtering. Structural, magnetic, and electrical properties were investigated. We did not detect any second phases or clusters after annealing. Annealing enhances saturation magnetization, electrical conductivity, and carrier concentration by about 250%, 350%, and two orders of magnitude, respectively. Anomalous Hall effect was observed at 100 K, indicating ferromagnetism mediated by charge carriers. Moreover, the hydrogen concentration was determined by elastic recoil detection methods. The results revealed that there is no hydrogen effusion during annealing. The reason of property enhancement by annealing arises from the thermal energy to promote hydrogen diffusion; hence, a more homogeneous distribution and lessens defect density.

Published in:

Journal of Applied Physics  (Volume:107 ,  Issue: 9 )