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Highly ordered Co2FeSi Heusler alloys grown on Ge(111) by low-temperature molecular beam epitaxy

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7 Author(s)
Kasahara, K. ; Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan ; Yamamoto, K. ; Yamada, S. ; Murakami, T.
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We demonstrate high-quality epitaxial growth of Heusler alloy Co2FeSi on Ge(111) by molecular beam epitaxy (MBE) at 200 °C. Even for growth at such a low temperature, L21-ordered crystal structure is formed and highly uniform magnetic environments around the Fe sites are realized, by transmission electron diffraction and conversion electron Mössbauer spectroscopy, respectively. We also find that the magnetic moment reaches 5.37 μB/f.u., which is the highest value in thin-film Co2FeSi samples reported.

Published in:

Journal of Applied Physics  (Volume:107 ,  Issue: 9 )

Date of Publication:

May 2010

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