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Improvement of electron injection in inverted bottom-emission blue phosphorescent organic light emitting diodes using zinc oxide nanoparticles

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5 Author(s)
Lee, Hyunkoo ; Department of Electrical Engineering and Computer Science, Inter-University Semiconductor Research Center, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 151-744, Republic of Korea ; Park, Insun ; Kwak, Jeonghun ; Yoon, Do Y.
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We fabricated highly efficient iridium(III) bis[(4,6-di-fluorophenyl)-pyridinato-N,C2] picolinate doped inverted bottom-emission blue phosphorescent organic light-emitting diodes, with an electron injection layer of zinc oxide (ZnO) nanoparticles (NPs). The ZnO NPs layer lowers the turn-on voltage by about 4 V and significantly enhances the efficiency. The device with ZnO NPs shows peak efficiencies of 16.5 cd/A and 8.2%, about three times higher than those of the device without ZnO NPs. Since the ZnO NPs layer has a wide band gap, good electron transporting properties and low work function, it can be utilized as an effective electron injection layer with good transparency.

Published in:

Applied Physics Letters  (Volume:96 ,  Issue: 15 )

Date of Publication:

Apr 2010

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