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Interface/Bulk Trap Recovery After Submelt Laser Anneal and the Impact to NBTI Reliability

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9 Author(s)

In this letter, submelt laser anneal used to achieve ultrashallow junctions (USJs) in capped high- devices with TaN/TiN metal gate electrode is investigated. The submelt laser anneal results in USJ and sharp junction on both n- and pMOSFET devices. However, this process induces interface and bulk defects and reduces negative-bias temperature instability (NBTI) reliability additionally. It is shown that if the laser anneal is followed by a rapid thermal anneal, the laser-related damage decreases, and the NBTI robustness improves without altering the obtained junction sharpness.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 6 )

Date of Publication:

June 2010

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