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Browse Journals & Magazines > Applied Physics Letters ...> Volume:96 Issue:15 Help

Temperature-dependent carrier tunneling for self-assembled InAs/GaAs quantum dots with a GaAsN quantum well injector

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6 Author(s)
Jin, C.Y. ; Division of Frontier Research and Technology, CREATE, and Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan ; Ohta, S. ; Hopkinson, M. ; Kojima, O.
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We have investigated the carrier tunneling process in a quantum-dot (QD) tunnel injection structure, which employs a GaAs1-xNx quantum well (QW) as a carrier injector. The influence of the barrier thickness between the GaAs1-xNx well and InAs dot layer has been studied by temperature-dependent photoluminescence. Although the 2.5 nm barrier sample exhibits the best tunneling efficiency, a 3.0 nm thickness for the barrier is optimum to retain good optical properties. The carrier capture time from the GaAs1-xNx QW to QD ground states has been evaluated by time-resolved photoluminescence. The result indicates that efficient carrier tunneling occurs at temperatures above 150 K due to the temperature dependent nature of phonon-assisted processes.

Published in:
Applied Physics Letters  (Volume:96 ,  Issue: 15 )

Date of Publication: Apr 2010

Page(s):
151104 - 151104-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.3396187
Date of Current Version :
15 April 2010
Issue Date :
Apr 2010

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