Cart (Loading....) | Create Account
Close category search window
 

Packaging Technology for Electronic Applications in Harsh High-Temperature Environments

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Hagler, P. ; U.S. Dept. of Defense, Missile Defense Agency, Washington, DC, USA ; Henson, P. ; Johnson, R.W.

Silicon-on-insulator (SOI) integrated circuits have been demonstrated for use at temperatures up to 300 °C. However, to build functional electronics, multiple devices must be interconnected to provide the desired functionality. A system-in-package approach has been developed using thick-film technology on Si3N4 ceramic substrates. Si3N4 has a near coefficient-of-thermal-expansion match to Si and a higher flexural modulus than Al2O3, which is commonly used for thick-film applications. The conductor metallization is Au. For 300 °C operation, eutectic Au-Ge die attach was used with a Ti/Ti:W/Au backside die metallization. After 3000 h at 325 °C, the mean die shear strength decreased from 3.96 to 3.33 kg/mm2, a decrease of only 16%. Formation of Au-Si-Ge ternary eutectic (melting point 326 °C) was observed and limits the use of Au-Ge die attach to 300 °C. SOI dies typically have Al wire bond pads that are not compatible with Au thermosonic wire bonding for high-temperature applications. Two plating processes have been examined: electroless Ni/immersion Au/electroless Au and electroless Ni/electroless Pd/immersion Au. The plating processes provide a barrier layer (Ni) and a wire-bondable finish (Au or Pd-Au) over the Al wire bond pads. After 10 000 h at 300 °C, the wire pull force for the Ni/Au samples decreased by ~30% due to annealing of the Au wire, while the ball shear force increased by ~35%. The daisy-chain electrical resistance remained relatively constant. For the Ni-Pd-Au samples, after 2000 h at 320 °C, the ball shear force remained constant or increased slightly, the wire pull force decreased by ~25% due to annealing of the Au wire, and the daisy-chain resistance remained relatively constant. After 3000 h, however, cratering of the Si wire bond pad was observed corresponding to some first bond pad lifts and - - increased daisy-chain resistance. Optimization of the wire-bonding parameters for bonding to the harder Ni/Pd/Au bond pad is required to eliminate cratering.

Published in:

Industrial Electronics, IEEE Transactions on  (Volume:58 ,  Issue: 7 )

Date of Publication:

July 2011

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.