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Efficiency Improvement of GaN-Based LEDs With a  \hbox {SiO}_{2} Nanorod Array and a Patterned Sapphire Substrate

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7 Author(s)
Huang, H.W. ; Inst. of ElectroOptical Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Huang, J.K. ; Lin, C.H. ; Lee, K.Y.
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The enhancement of light extraction from GaN-based light-emitting diodes (LEDs) with a patterned sapphire substrate (PSS) and a SiO2 12-fold photonic quasi-crystal (PQC) structure using nanoimprint lithography is presented. At a driving current of 20 mA on transistor-outline-can package, the light output powers of LED with a PSS and LED with a PSS and a SiO2 PQC structure are enhanced by 35% and 48%, compared with the conventional LED. In addition, the higher output power of the LED with a PSS and a SiO2 PQC structure is due to better reflectance on PSS and higher epitaxial quality on an n-GaN using a SiO2 12-fold PQC structure pattern. These results provide promising potential to increase output powers of commercial light-emitting devices.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 6 )

Date of Publication:

June 2010

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