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Circuit model for multilongitudinal-mode semiconductor lasers

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2 Author(s)
Chen, Weiyou ; Dept. of Electron. Eng., Jilin Univ., Changchun, China ; Shiyong Liu

Under the assumption that the emission spectra of a semiconductor laser diode (LD) as a function of wavelength is Gaussian, a simple circuit model for a multilongitudinal-mode (MLM) LD is developed based upon MLM rate equations. This model is very suitable for the computer-aided analysis of an optoelectronic integrated circuit (OEIC). Using this model, the dc and ac characteristics of a trenched buried heterostructure LD are studied. The simulated results agree with the reports. The dependence of threshold and emission spectra on the cavity length is simulated

Published in:

Quantum Electronics, IEEE Journal of  (Volume:32 ,  Issue: 12 )