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Cryogenic Performance of a Low-Noise JFET-CMOS Preamplifier for HPGe Detectors

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6 Author(s)
Alberto Pullia ; Department of Physics and INFN-Sezione di Milano, University of Milano, Milano, Italy ; Francesca Zocca ; Stefano Riboldi ; Dusan Budjas
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Cryogenic low-noise charge sensitive preamplifiers have been developed and realized for the GERmanium Detector Array (GERDA). An integrated JFET-CMOS preamplifier, which is fully functional at cryogenic temperatures, has been tested in conjunction with an unsegmented p-type HPGe detector. Both the crystal and the preamplifier were operated inside a liquid nitrogen dewar at 77 K. The detector capacitance was ~60 pF. An optimum resolution of 1.6 keV FWHM has been obtained for the pulser line at 6 ¿s shaping time. A resolution of 2.1 keV FWHM has been achieved for the 1.332 MeV line from a 60Co source. A wide bandwidth (rise time of ~16 ns) permits use of pulse-shape analysis techniques to localize the position of the photon interactions inside the crystal. A low power consumption (~23 mW) makes the preamplifier suitable for a multi-channel array of germanium detectors.

Published in:

IEEE Transactions on Nuclear Science  (Volume:57 ,  Issue: 2 )