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AlGaN/GaN/AlGaN DH-HEMTs Breakdown Voltage Enhancement Using Multiple Grating Field Plates (MGFPs)

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6 Author(s)
Bahat-Treidel, E. ; Ferdinand-Braun-Inst. fur Hochstfrequenztechnik (FBH), Berlin, Germany ; Hilt, O. ; Brunner, F. ; Sidorov, V.
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GaN-based high-electron mobility transistors with planar multiple grating field plates (MGFPs) for high-voltage operation are described. A synergy effect with additional electron channel confinement by using a heterojunction AlGaN back barrier (BB) is demonstrated. Suppression of the OFF-state subthreshold gate and drain leakage currents enables breakdown voltage enhancement over 700 V and a low ON-state resistance of 0.68 mΩ × cm2. Such devices have a minor tradeoff in ON-state resistance, lag factor, maximum oscillation frequency, and cutoff frequency. A systematic study of the MGFP design and the effect of Al composition in the BB is described. Physics-based device simulation results give insight into electric field distribution and charge carrier concentration, depending on the field plate design.

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Electron Devices, IEEE Transactions on  (Volume:57 ,  Issue: 6 )