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Design of Tunneling Field-Effect Transistors Based on Staggered Heterojunctions for Ultralow-Power Applications

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4 Author(s)
Lingquan Wang ; GlobalFoundries, Inc. , Sunnyvale, CA, USA ; Edward Yu ; Yuan Taur ; Peter Asbeck

This letter presents the design of a tunneling FET with III-V-based tunnel heterojunctions for operation in digital circuits with supply voltages as low as 0.3 V. A representative implementation is predicted to achieve an on-state current drive of 0.4 mA/??m with an off-state current of 50 nA/??m. Comparison with homojunction counterparts reveals that the hetero-tunnel-junction implementations may address better the design tradeoff between on-state drive and off-state leakage.

Published in:

IEEE Electron Device Letters  (Volume:31 ,  Issue: 5 )