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Scanning nanoelectrometer based on a two-dimensional electron gas transistor with a probe-integrated gate electrode

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2 Author(s)
Kawano, Y. ; Advanced Device Laboratory, RIKEN, 2-1, Hirosawa, Wako, Saitama 351-0198, Japan ; Ishibashi, Koji

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3371766 

We report a scanning nanoelectrometer based on a two-dimensional electron gas (2DEG) transistor in GaAs/AlGaAs, whose gate electrode is combined with a metal-coated cantilever probe. In this system, local electric potential is detected through gate effects for the 2DEG detector caused by electrical polarization of the probe. Using this technique, we have demonstrated mapping of the electric potential distribution for 2DEG samples in a GaAs/AlGaAs interface and in a graphene surface. Time-resolved measurements of local potential are also presented.

Published in:

Applied Physics Letters  (Volume:96 ,  Issue: 14 )

Date of Publication:

Apr 2010

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