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Hole-Injection-Type and Electron-Injection-Type Silicon Avalanche Photodiodes Fabricated by Standard 0.18- \mu m CMOS Process

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3 Author(s)
Iiyama, K. ; Sch. of Electr. & Comput. Eng., Kanazawa Univ., Kanazawa, Japan ; Takamatsu, H. ; Maruyama, T.

A hole-injection-type and an electron-injection-type Si avalanche photodiode (APD) were fabricated by a standard 0.18-μm complementary metal-oxide-semiconductor process. The avalanche amplifications are observed below 10 V of the bias voltage, and the maximum avalanche gains were 493 and 417 for the hole-injection-type and the electron-injection-type APDs, respectively. The maximum bandwidth is 3.4 GHz, and the gain-bandwidth products were 90 and 180 GHz for the hole-injection-type and the electron-injection-type APDs, respectively.

Published in:

Photonics Technology Letters, IEEE  (Volume:22 ,  Issue: 12 )