By Topic

Pulse Power Generation in Nano- and Subnanosecond Range by Means of Ionizing Fronts in Semiconductors: The State of the Art and Future Prospects

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Grekhov, I.V. ; Ioffe Phys.-Tech. Inst., Russian Acad. of Sci., St. Petersburg, Russia

Ionization front propagation in a high-voltage reversely biased silicon p-n diode is the fastest nonoptical process of electron-hole plasma generation in semiconductors. It is capable of switching a high-voltage semiconductor structure from the blocking to the conducting state within several hundreds of picoseconds. Double-donor electron traps with ionization energies of 0.28 and 0.54 eV are the main source of carriers which initiate formation and propagation of these fronts. Dinistor n+ -p-n-p+ structures with such a switching mechanism are capable of generating electric pulses with several kiloamperes of amplitude and nanosecond and even subnanosecond pulse rise time. High-power pulse generators based on these devices have been developed and found applications in many modern technologies. Our numerical simulations indicate a possibility to excite new types of impact ionization fronts which are capable of switching high-voltage devices within dozens of picoseconds.

Published in:

Plasma Science, IEEE Transactions on  (Volume:38 ,  Issue: 5 )