By Topic

Design of a 4 \times 10 Gb/s VCSEL Driver Using Asymmetric Emphasis Technique in 90-nm CMOS for Optical Interconnection

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Kenichi Ohhata ; Department of Electrical and Electronics Engineering, Kagoshima University, Kagoshima, Japan ; Hironori Imamura ; Yoshiki Takeshita ; Kiichi Yamashita
more authors

This paper describes the design and experimental results of a 4 ?? 10 Gb/s vertical-cavity surface-emitting laser (VCSEL) driver using the asymmetric emphasis technique. Conventional symmetric emphasis techniques can compensate for the influences of parasitic capacitances; however, they cannot compensate for the nonlinear effects of a VCSEL. To overcome this problem, an asymmetric emphasis technique that can separately control the emphasis pulses at the rising and falling edges is proposed. This allows fast transition in VCSEL output waveform suppressing ringing. A driver circuit that has two separate emphasis circuits for the rising and falling edges is proposed in order to implement the asymmetric emphasis technique. This configuration enables us to separately control the height, width, and setup time of the emphasis pulses at the rising and falling edges. The test chip fabricated by using 90-nm CMOS technology generates a clearly open optical eye at a data rate of 10 Gb/s, and we can confirm the existence of a wide phase margin by a transmission experiment.

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:58 ,  Issue: 5 )