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Modeling of the parasitic transistor-induced drain breakdown in MOSFETs

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1 Author(s)
Hei Wong ; Dept. of Electron. Eng., City Univ. of Hong Kong, Kowloon, Hong Kong

Parasitic bipolar transistor (PET) induced breakdown characteristics in MOSFETs are investigated and modeled with the aid of MINIMOS simulation. Formula for approximating the breakdown voltage is also developed. The proposed model agrees well with the MINIMOS simulation results, especially in the bias, temperature, and substrate resistance dependencies. According to the simulation and theoretical results, the breakdown voltage for the PET-induced breakdown can be increased by raising the temperature, increasing the channel length, and reducing the substrate resistance

Published in:

Electron Devices, IEEE Transactions on  (Volume:43 ,  Issue: 12 )

Date of Publication:

Dec 1996

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