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Interpretation of the static and dynamic characteristics of 1-D thin film position sensitive detectors based on a-Si:H p-i-n diodes

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2 Author(s)
Martins, Rodrigo F.P. ; Dept. of Mater. Sci., New Univ. of Lisbon, Portugal ; Fortunato, Elvira M.C.

In this work, we present a model to interpret the steady-state and the dynamic detection limits of 1-D Thin Film Position Sensitive Detectors (1-D TFPSD) based on p-i-n a-Si:H devices. From this, an equivalent electric circuit is derived and the predicted values are compared with the experimental results obtained in 1-D TFPSD devices, with different sizes. The model is also able to determine the device characteristics that influence the spatial limits and the response time of the device

Published in:

Electron Devices, IEEE Transactions on  (Volume:43 ,  Issue: 12 )

Date of Publication:

Dec 1996

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