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A 19.4 dBm, Q-Band Class-E Power Amplifier in a 0.12 \mu {\rm m} SiGe BiCMOS Process

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2 Author(s)
Kalantari, N. ; ECE Dept., Univ. of California at San Diego (UCSD), La Jolla, CA, USA ; Buckwalter, J.F.

A Q-band, Class-E power amplifier has been designed and fabricated in a 0.12 μm SiGe BiCMOS technology. The amplifier was designed for high output power using on-chip power combining networks. It operates respectively from a 1.2 V supply for peak efficiency and a 2.4 V supply for maximum power and occupies an area of 0.801 mm2. A peak PAE of 18% is measured for an output power of 11.3 dBm at 45 GHz and a maximum P sat of 19.4 dBm is measured at 42 GHz with a PAE of 14.4%. The power amplifier operates from 42 to 50 GHz.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:20 ,  Issue: 5 )

Date of Publication:

May 2010

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