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Enhanced Carrier-Mobility-Fluctuation Origin Low-Frequency Noise in Uniaxial Strained PMOSFETs

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3 Author(s)
Kuo, J.J. ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Chen, W.P. ; Pin Su

This letter reports our new findings on the impact of uniaxial strain on the low-frequency-noise characteristics in nanoscale PMOSFETs. It is found that the normalized drain current noise of the strained device in the high-gate-overdrive (V gst) regime is larger than its control counterpart. In addition, the enhanced carrier-mobility-fluctuation origin 1/f noise for the strained device in the high-|V gst| regime indicates that the carrier mobility in the strained device is more phonon limited, which represents an intrinsic strain effect on the low-frequency noise.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 5 )