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Comments on “Effective Modulation of Ni Silicide Schottky Barrier Height Using Chlorine Ion Implantation and Segregation”

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2 Author(s)
Connelly, D. ; Acorn Technol., Palo Alto, CA, USA ; Clifton, P.

Data claimed to support a barrier height between Cl-implanted Ni-Si and Si of as low as 0.08 V are consistent with much higher barrier heights when the effects of series resistance and junction nonideality are considered. Using smaller contacts would provide increased sensitivity to the Schottky barrier heights between the metal and the silicon substrate.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 5 )