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Browse Journals & Magazines > Electron Device Letters, IEEE ...> Volume:31 Issue:5 Help

Correlation Between TDDB and VRDB for Low- k Dielectrics With Square Root E Model

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2 Author(s)
Mingte Lin ; United Microelectron. Corp., Hsinchu, Taiwan ; Su, K.C.

A concise relation between voltage ramp dielectric breakdown (VRDB) and time-dependent dielectric breakdown (TDDB) based on the square-root (SQRT) E model for low- k dielectric-reliability evaluation was established. VRDB and TDDB experiments on low- k dielectrics in Cu interconnects were conducted and showed a very well correlation by this relation. The electric field acceleration parameter of the SQRT E model can be estimated with the dual ramping rate VRDB test. The characteristic of the statistic distribution of VRDB is shown to relate to that of TDDB.

Published in:
Electron Device Letters, IEEE  (Volume:31 ,  Issue: 5 )

Date of Publication: May 2010

Page(s):
494 - 496
ISSN :
0741-3106
INSPEC Accession Number:
11260348
Digital Object Identifier :
10.1109/LED.2010.2044554
Product Type:
Journals & Magazines
Date of Publication :
05 April 2010
Date of Current Version :
22 April 2010
Issue Date :
May 2010
Sponsored by :
IEEE Electron Devices Society

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