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High-Quality \hbox {MgO}/\hbox {TiO}_{2}/\hbox {MgO} Nanolaminates on p-GaN MOS Capacitor

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3 Author(s)
Ko-Tao Lee ; Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan ; Chih-Fang Huang ; Jeng Gong

In this letter, the electrical characteristics of nanolaminate MgO/TiO2/MgO on a p-GaN MOS capacitor with and without postmetallization annealing (PMA) and (NH4)2Sx, treatments are investigated. With both PMA and (NH4)2Sx, treatments, the leakage current densities are reduced to 3.9 × 10-8 and 3.7 × 10-8 A/cm2 at ±1 V, respectively. With a much-improved C-V curve, the effective dielectric constant of the gate dielectric stack for both treatments is 17.8, and an averaged interface trap density of 3.1 × 1011 eV-1 cm-2 is obtained.

Published in:

IEEE Electron Device Letters  (Volume:31 ,  Issue: 6 )