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\hbox {In}_{0.46}\hbox {Ga}_{0.54}\hbox {P}_{0.98} \hbox {Sb}_{0.02}/\hbox {GaAs} : Its Band Offset and Application to Heterojunction Bipolar Transistor

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4 Author(s)
Yu-Chung Chin ; Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan ; Hao-Hsiung Lin ; Chao-Hsing Huang ; Min-Nan Tseng

We report on the band alignment of In0.46Ga0.54 P0.98Sb0.02/GaAs and the dc characteristics of In0.46Ga0.54P0.98Sb0.02/GaAs heterojunction bipolar transistors (HBTs). By comparing the forward and reverse Gummel plot, we found a potential spike existing at the InGaPSb/GaAs interface. Through a flatband extrapolation from the currents of the forward and reverse Gummel plot and the energy gap determined from photoluminescence, we concluded that In0.46Ga0.54P0.98Sb0.02/GaAs is in a type-I band alignment. The conduction-band offset and valence-band offset are 0.12 and 0.35 eV, respectively. As a result of the type-I band alignment, the InGaPSb/GaAs HBTs showed a more significant thermal degradation of the current gain than the control InGaP/GaAs HBT. The thermal behavior is beneficial to ruggedness.

Published in:

IEEE Electron Device Letters  (Volume:31 ,  Issue: 5 )