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We have designed and batch fabricated silicon cantilever scanning probes integrating, for the first time, a coaxial tip to produce highly localized electric fields and a piezoresistor to measure cantilever deflection. These probes will improve the lateral resolution of scanning gate microscopy enabling the study of electron organization in semiconductor nanostructures. The full-width at half-maximum of the perturbation produced by our coaxial tip is ~3x smaller than that of conventional tips. At 300 K, the vertical displacement resolution of a 405 Â¿m long probe is 2.4 nm in a 1 kHz bandwidth. With the ability to image topography and apply local electric fields, our probe has broad applications including electromechanical studies of cells and dopant profiling in semiconductors.
Date of Conference: 24-28 Jan. 2010