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LPCVD amorphous SiCx for freestanding electron transparent windows

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8 Author(s)
B. Morana ; Delft University of Technology, DIMES-ECTM, Netherlands ; J. F. Creemer ; F. Santagata ; C. -C. Fan
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MEMS electron-transparent membranes made of low-stress silicon nitride are widely employed in electron microscopy. However, this material has limited resistance to electron beams. We therefore developed a layer of LPCVD SiC. Our layer is amorphous, uniform, continuous, low-stress, and has extremely low etch-rates in common wet etchants. As free-standing electron transparent window, it demonstrates a resistance to electron beam damage 3 times higher than low-stress LPCVD silicon nitride. Our SiC layer could be advantageously employed in other MEMS devices, especially those operating in harsh environments, and in applications where high etching selectivity is required.

Published in:

Micro Electro Mechanical Systems (MEMS), 2010 IEEE 23rd International Conference on

Date of Conference:

24-28 Jan. 2010