Skip to Main Content
This paper presents the new concept of RF MEMS silicon contact switch and its verification for high isolation at 50-110 GHz. A high isolation is achieved by locating the floating top contact electrode 30 Â¿m apart from the bottom coplanar waveguide (CPW) signal line in lateral direction at initial off-state. The switch contact is realized by the dual axis movement, namely a lateral movement by comb electrodes and a following vertical movement by a bottom electrode. The actuation voltages are measured for dual axis movement. The isolation of the switch was measured at 50-110 GHz to prove the concept of isolation improvement using dual axis movement.