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A 50-110 GHz ohmic contact RF MEMS silicon switch with high isolation

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4 Author(s)
Yong-Seok Lee ; Seoul National University, Korea ; Yun-Ho Jang ; Jung-Mu Kim ; Yong-Kweon Kim

This paper presents the new concept of RF MEMS silicon contact switch and its verification for high isolation at 50-110 GHz. A high isolation is achieved by locating the floating top contact electrode 30 ¿m apart from the bottom coplanar waveguide (CPW) signal line in lateral direction at initial off-state. The switch contact is realized by the dual axis movement, namely a lateral movement by comb electrodes and a following vertical movement by a bottom electrode. The actuation voltages are measured for dual axis movement. The isolation of the switch was measured at 50-110 GHz to prove the concept of isolation improvement using dual axis movement.

Published in:

Micro Electro Mechanical Systems (MEMS), 2010 IEEE 23rd International Conference on

Date of Conference:

24-28 Jan. 2010