By Topic

A 50-110 GHz ohmic contact RF MEMS silicon switch with high isolation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Yong-Seok Lee ; Seoul Nat. Univ., Seoul, South Korea ; Yun-Ho Jang ; Jung-Mu Kim ; Yong-Kweon Kim

This paper presents the new concept of RF MEMS silicon contact switch and its verification for high isolation at 50-110 GHz. A high isolation is achieved by locating the floating top contact electrode 30 ¿m apart from the bottom coplanar waveguide (CPW) signal line in lateral direction at initial off-state. The switch contact is realized by the dual axis movement, namely a lateral movement by comb electrodes and a following vertical movement by a bottom electrode. The actuation voltages are measured for dual axis movement. The isolation of the switch was measured at 50-110 GHz to prove the concept of isolation improvement using dual axis movement.

Published in:

Micro Electro Mechanical Systems (MEMS), 2010 IEEE 23rd International Conference on

Date of Conference:

24-28 Jan. 2010