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Impact of top electrode on electrical stress reliability of metal-insulator-metal capacitor with amorphous ZrTiO4 film

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6 Author(s)
Yung-Hsien Wu ; Department of Engineering and System Science, National Tsing-Hua University, 300 Hsinchu, Taiwan ; Lin, Chia-Chun ; Chen, Lun-Lun ; Chen, Bo-Yu
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For metal-insulator-metal (MIM) capacitors with an amorphous ZrTiO4 film as the dielectric, the impact of top electrode including Ni and Al on electrical stress reliability was studied and the mechanisms to explain the electrode-dependent reliability were also proposed in this work. It has been found that the Ni-electrode MIM capacitors reveal good reliability in terms of 0.91% capacitance change after ten-year operation under -2 V constant voltage stress while that for those with Al electrode degrades to 1.92%. This undesirable higher capacitance change can be mainly ascribed to a larger permittivity modulation in the dielectric that is due to higher leakage current and consequently more trapped charges and dipoles caused by a lower electrode work function. In addition, a parasitic Al2O3 film in the Al-electrode MIM capacitors also worsens the integrity of the dielectric because of the existence of additional traps.

Published in:

Applied Physics Letters  (Volume:96 ,  Issue: 13 )