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CMOS-compatible AlN piezoelectric micromachined ultrasonic transducers

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12 Author(s)
Stefon Shelton ; Berkeley Sensor & Actuator Center University of California, Davis, USA ; Mei-Lin Chan ; Hyunkyu Park ; David Horsley
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Piezoelectric micromachined ultrasonic transducers for air-coupled ultrasound applications were fabricated using aluminum nitride (AlN) as the active piezoelectric layer. The AlN is deposited via a low-temperature sputtering process that is compatible with deposition on metalized CMOS wafers. An analytical model describing the electromechanical response is presented and compared with experimental measurements. The membrane deflection was measured to be 210 nm when excited at the 220 kHz resonant frequency using a 1Vpp input voltage.

Published in:

2009 IEEE International Ultrasonics Symposium

Date of Conference:

20-23 Sept. 2009