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CMOS-compatible AlN piezoelectric micromachined ultrasonic transducers

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12 Author(s)
Shelton, S. ; Berkeley Sensor & Actuator Center, Univ. of California, Davis, CA, USA ; Mei-Lin Chan ; Hyunkyu Park ; Horsley, D.
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Piezoelectric micromachined ultrasonic transducers for air-coupled ultrasound applications were fabricated using aluminum nitride (AlN) as the active piezoelectric layer. The AlN is deposited via a low-temperature sputtering process that is compatible with deposition on metalized CMOS wafers. An analytical model describing the electromechanical response is presented and compared with experimental measurements. The membrane deflection was measured to be 210 nm when excited at the 220 kHz resonant frequency using a 1Vpp input voltage.

Published in:

Ultrasonics Symposium (IUS), 2009 IEEE International

Date of Conference:

20-23 Sept. 2009

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