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Prediction of band offsets of the ternary alloy Si1-x-ySnxCy on Si

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3 Author(s)
Sen, G. ; Inst. of Radio Phys. & Electron., Univ. of Calcutta, Kolkata, India ; Mukhopadhyay, B. ; Basu, P.K.

The band offsets and band gap for strained Si1-x-ySnxCy layers grown on Si substrate are estimated. The hydrostatic strain, the uniaxial strain and the intrinsic alloy effect are considered separately. The model is verified with the available bandgap energy of binary material.

Published in:
Emerging Trends in Electronic and Photonic Devices & Systems, 2009. ELECTRO '09. International Conference on

Date of Conference: 22-24 Dec. 2009

Page(s):
471 - 474
Print ISBN:
978-1-4244-4846-3
INSPEC Accession Number:
11208435
Conference Location :
Varanasi
Digital Object Identifier :
10.1109/ELECTRO.2009.5441065
Product Type:
Conference Publications

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