Referenced Items are not available for this document.
This paper presents a low-power, high-speed direct digital synthesizer monolithic microwave integrated circuit in a SiGe bipolar technology with 8-bit phase and 6-bit amplitude resolution. The phase-to-amplitude mapping circuit is implemented as a differential pair in saturation. The use of a modern SiGe bipolar technology enables both a low power consumption of 488 mW at a 3.3-V supply and a high clock frequency of 16.8 GHz; here, the maximum output frequency is 8.3344 GHz and the frequency resolution is 65.625 MHz. A spurious-free dynamic range (SFDR) between 47-20 dBc is achieved. First Nyquist zone SFDR, narrowband SFDR, and frequency-modulation measurements of the signal are shown and discussed. The chip is fabricated in a 0.35-??m 200-GHz fT SiGe bipolar technology and occupies only 1128 ?? 1028 ??m2. The chip is mounted on a printed circuit board for measurement.
Published in:
Microwave Theory and Techniques, IEEE Transactions on
(Volume:58
,
Issue:
5
)
Date of Publication: May 2010
- Page(s):
- 1375 - 1383
- ISSN :
- 0018-9480
- INSPEC Accession Number:
- 11285950
- Digital Object Identifier :
- 10.1109/TMTT.2010.2042860
- Product Type:
- Journals & Magazines
- Date of Publication :
- 01 April 2010
- Date of Current Version :
- 27 May 2010
- Issue Date :
- May 2010
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
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