By Topic

Schottky diodes for analogue phase shifters in GaAs MMICs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Shepherd, P.R. ; Sch. of Electron. & Electr. Eng., Bath Univ., UK ; Cryan, M.J.

A simple Schottky diode structure, which is easily implemented in a foundry gallium arsenide (GaAs) process, is described. This structure occupies very much less area than the usual technique of realising Schottky diodes, using standard FET structures. Two variations of the diode have been characterized and modeled using a standard equivalent circuit. This has been used to design a simple analogue phase shifter based on a loaded-line configuration. The phase shifter was manufactured using a standard foundry process and has shown excellent results in terms of phase shift linearity with tuning voltage, combined with low insertion loss, over the range 2-8 GHz

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:44 ,  Issue: 11 )