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0-40 GHz GaAs MESFET distributed baseband amplifier ICs for high-speed optical transmission

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2 Author(s)
S. Kimura ; NTT LSI Labs., Atsugi, Japan ; Y. Imai

We describe distributed amplifiers built using advanced circuit design techniques to improve gain and noise performance at low frequencies. Using these techniques we have developed an amplifier IC with a 0-36 GHz bandwidth and a noise figure of 4 dB at low frequencies. This frequency range starting from 0 Hz makes it possible to use the IC as a baseband amplifier for SDH optical transmission systems and this noise figure is about 1 dB better than conventional distributed amplifiers. We also present another amplifier IC built using our loss compensation technique to improve high-frequency performance of the amplifier. This IC has a 0-44-GHz bandwidth, which is the widest among all reported GaAs MESFET baseband amplifiers

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:44 ,  Issue: 11 )