Referenced Items are not available for this document.
This paper Is concerned with the design considerations and performance results for low-voltage Si monolithic microwave integrated circuits (MMICs) developed for mobile and personal communications applications. A 0.4 μm ECL-BiCMOS process technology was employed to develop bipolar-based RF amplifiers, MOS-based IF amplifiers, BiCMOS-based simplified Gilbert mixers, and monolithic down-converter as well as upconverter ICs incorporating these elements. These converters are designed to operate at a bias voltage of 2 V over 1.8-6.2 GHz exhibiting a conversion gain of 35-15 dB with a variable IF frequency of up to several 100 MHz. Chip size for both the downconverter and upconverter ICs is 1.0 mm×0.7 mm
Published in:
Microwave Theory and Techniques, IEEE Transactions on
(Volume:44
,
Issue:
11
)
Date of Publication: Nov 1996
- Page(s):
- 2025 - 2031
- ISSN :
- 0018-9480
- INSPEC Accession Number:
- 5459971
- Digital Object Identifier :
- 10.1109/22.543958
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Nov 1996
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
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