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L-C-band low-voltage BiCMOS MMICs for dual-mode cellular-LAN applications

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5 Author(s)
Madihian, M. ; Network Res. Lab., NEC Corp., Kawasaki, Japan ; Imai, K. ; Yoshida, H. ; Kinoshita, Y.
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This paper Is concerned with the design considerations and performance results for low-voltage Si monolithic microwave integrated circuits (MMICs) developed for mobile and personal communications applications. A 0.4 μm ECL-BiCMOS process technology was employed to develop bipolar-based RF amplifiers, MOS-based IF amplifiers, BiCMOS-based simplified Gilbert mixers, and monolithic down-converter as well as upconverter ICs incorporating these elements. These converters are designed to operate at a bias voltage of 2 V over 1.8-6.2 GHz exhibiting a conversion gain of 35-15 dB with a variable IF frequency of up to several 100 MHz. Chip size for both the downconverter and upconverter ICs is 1.0 mm×0.7 mm

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:44 ,  Issue: 11 )

Date of Publication:

Nov 1996

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