Referenced Items are not available for this document.
GaAs bulk micromachining combined with MESFET technology has been applied to fabricate a thermoelectric microwave power sensor in a terminating load configuration. Its advantages are technological compatibility with MMIC processes combined with excellent performance: the sensitivity under normal ambient pressure is 2.02 V/W, inherent linearity over a dynamic range of 48 dB and a thermal time constant of 500 μs; maximum VSWR of 1.07 up to 26.5 GHz. Such integrated sensors can also be used in the millimetre-wave regime
Published in:
Electronics Letters
(Volume:32
,
Issue:
23
)
Date of Publication: 7 Nov 1996
- Page(s):
- 2149 - 2150
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 5433004
- Digital Object Identifier :
- 10.1049/el:19961416
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- 7 Nov 1996
- Sponsored by :
- Institution of Engineering and Technology
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