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A 90-nm CMOS Power Amplifier for 802.16e (WiMAX) Applications

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9 Author(s)
Ofir Degani ; Mobility Wireless Group, Intel Corporation, Haifa, Israel ; Fabian Cossoy ; Shay Shahaf ; Emanuel Cohen
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In this paper, we demonstrate a single-stage 90-nm CMOS power amplifier (PA) for 2.3-2.7-GHz WiMAX (802.16e) band applications. An integrated balun is used to match the output to 50-?? load. The PA gain and saturated power ( P SAT) are +18 and +32 dBm, respectively, working from a 3.3-V supply, with a peak power-added efficiency of 48%. A digital-predistortion technique is used to enhance the PA linearity. The measured error vector magnitude for a 64 quadrature amplitude modulation orthogonal frequency-division multiplexing signal is improved from -24 to -30 dB at +25-dBm output power. Compliance with the 802.16e standard 10-MHz WiMAX mask and Federal Communications Commission regulations is demonstrated at + 25 dBm of output power with power efficiency of ~ 25% and with a measured second harmonic level of - 31 dBm/MHz. Using a crest factor reduction technique, mask compliance is achieved at + 27 dBm with tradeoff on EVM = -20 dB, sufficient for quadrature phase-shift keying.

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:58 ,  Issue: 5 )
IEEE RFIC Virtual Journal
IEEE RFID Virtual Journal