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A Novel High-Temperature Planar Package for SiC Multichip Phase-Leg Power Module

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6 Author(s)
Puqi Ning ; Center for Power Electron. Syst., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA ; Lei, T.G. ; Fei Wang ; Guo-Quan Lu
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This paper presents the design, development, and testing of a phase-leg power module packaged by a novel planar packaging technique for high-temperature (250°C) operation. The nanosilver paste is chosen as the die-attach material as well as playing the key functions of electrically connecting the devices' pads. The electrical characteristics of the SiC-based power semiconductors, SiC JFETs, and SiC Schottky diodes have been measured and compared before and after packaging. No significant changes (<;5%) are found in the characteristics of all the devices. Prototype module is fabricated and operated up to 400 V, 1.4 kW at junction temperature of 250°C in the continuous power test. Thermomechanical robustness has also been investigated by passive thermal cycling of the module from -55°C to 250°C. Electrical and mechanical performances of the packaged module are characterized and considered to be reliable for at least 200 cycles.

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Power Electronics, IEEE Transactions on  (Volume:25 ,  Issue: 8 )