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Influence of Interface Traps on the Temperature Sensitivity of MOSFET Drain-Current Variations

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3 Author(s)
Appaswamy, A. ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA ; Chakraborty, P. ; Cressler, J.D.

The temperature sensitivity of drain-current variations in the subthreshold regime of MOSFET operation is analyzed through TCAD simulations and device measurements. Interface traps are determined to be the dominant factor in increasing the temperature sensitivity of drain-current differences in weak inversion. The variability caused by interface defects has significant implications on the reliability of MOSFET-based circuits intended for extreme-environment applications.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 5 )