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Temperature dependence of spin diffusion length in silicon by Hanle-type spin precession

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6 Author(s)
Sasaki, T. ; SQ Research Center, TDK Corporation, 385-8555 Nagano, Japan ; Oikawa, T. ; Suzuki, T. ; Shiraishi, M.
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The Hanle-type spin precession method was carried out in association with nonlocal (NL) magnetoresistance measurement using a highly doped (5×1019 cm-3) silicon (Si) channel. The spin diffusion length obtained by the Hanle-method is in good agreement with that of the gap dependence of NL signals. We have evaluated the interface and bulk channel effects separately, and it was demonstrated that the major factor of temperature dependence of NL signals originates from the spin polarization reduction at interface between the tunnel barrier and silicon.

Published in:

Applied Physics Letters  (Volume:96 ,  Issue: 12 )

Date of Publication:

Mar 2010

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