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Browse Journals & Magazines > Electronics Letters ...> Volume:32 Issue:22 Help

Low threshold MBE-grown AlInGaAs/AlGaAs strained multiquantum-well lasers by rapid thermal annealing

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3 Author(s)
Ko, J. ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA ; Chen, C.‐H. ; Coldren, L.A.

With post-growth rapid thermal annealing (RTA), 824 nm strained Al 0.15In0.25Ga0.6As multiquantum-well (MQW) lasers grown by solid source molecular beam epitaxy (MBE) showed a record low threshold current density of 83 A/cm2 per well. Ridge waveguide lasers fabricated from the same material exhibited pulsed threshold current of 5 mA and 62% external quantum efficiency without facet coating. In addition, 1.4 K photoluminescence (PL) study suggests that RTA is very effective in removing nonradiative centres in the active region

Published in:
Electronics Letters  (Volume:32 ,  Issue: 22 )

Date of Publication: 24 Oct 1996

Page(s):
2099 - 2100
ISSN :
0013-5194
INSPEC Accession Number:
5427040
Digital Object Identifier :
10.1049/el:19961378
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
24 Oct 1996
Sponsored by :
Institution of Engineering and Technology

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