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High-breakdown voltage Al0.66In0.34As0.85Sb0.15/In 0.75Ga0.25As/InP heterostructure field-effect transistors

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8 Author(s)
Su, Jan-Shing ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Wei-Chou Hsu ; Dong-Tsuen Lin ; Lin, Wei
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Al0.66In0.34As0.85Sb0.15 /In0.75Ga0.25As/InP heterostructure field-effect transistors (HFETs) with high breakdown voltage have been successfully fabricated by low-pressure metal organic chemical vapour deposition (LP-MOCVD). By virtue of an Al0.66In0.34As0.85Sb0.15 Schottky layer and an inverted δ-doped carrier supplier, a gate-to-drain breakdown voltage as high as 40 V can be obtained. Moreover. The temperature dependence of breakdown voltage shows a negative temperature coefficient

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Electronics Letters  (Volume:32 ,  Issue: 22 )