By Topic

Fabrication of Thick Insulating Membrane Embedded in Si Substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Ovchinnikov, V. ; TKK Micronova, Helsinki Univ. of Technol., Espoo, Finland ; Liu, Y.

The present paper is devoted to the description of a fabrication process of thick (tens of micrometers) insulating SiO2 membrane embedded in a c-Si substrate. The membrane processing consists of total thermal oxidation of trenches, which were preliminary etched on front side of the substrate, conformal deposition of dielectric layer for SiO2 trenches closing and selective etching of c-Si from back side of the substrate. The proposed process provides high accuracy of membrane thickness control and can be used in monolithic integration of dielectric based passive components with active semiconductor elements. Measurement results demonstrate that thermal insulation similar to that of glass substrate can be reached.

Published in:

Quantum, Nano and Micro Technologies, 2010. ICQNM '10. Fourth International Conference on

Date of Conference:

10-16 Feb. 2010