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Crystalline Ge1-xSnx Heterostructures in Lateral High-Speed Devices

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4 Author(s)
Sabina Jeschke ; ZLW/IMA, RWTH Aachen Univ., Aachen, Germany ; Olivier Pfeiffer ; Joerg Schulze ; Marc Wilke

This paper describes an approach to manufacture high-speed Germanium MOSFETS with strained channels made from Ge1-xsSnx-alloys while embedding the needed technology process flow into a virtual knowledge management environment based on a virtual nano electrical lab.

Published in:

Quantum, Nano and Micro Technologies, 2010. ICQNM '10. Fourth International Conference on

Date of Conference:

10-16 Feb. 2010