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Extraction of SPICE BJT model parameters in BIPOLE3 using optimization methods

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3 Author(s)
Sadovnikov, A.D. ; Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada ; Roulston, D.J. ; Celi, D.

We present a method for SPICE model parameter extraction for a bipolar transistor in the active and quasisaturation modes. It uses the capabilities of the BIPOLE3 simulator to enhance the optimization procedure. Comparisons are made between the Gummel-Poon, the VBIC95, and the SGS-Thomson Microelectronics SPICE model results for IC(V BE), IB(VBE), β(IC), f T(IC), and IC(VCE) characteristics

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Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:15 ,  Issue: 11 )