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Simulation of redeposition during platinum etching in argon plasmas

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4 Author(s)
Saussac, J. ; Département de Physique, 2900 Edouard Montpetit, Université de Montréal, CP 6128, Succ. Centre-ville, Montréal, Quebec H3C 3J7, Canada ; Margot, J. ; Stafford, L. ; Chaker, M.

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The influence of redeposition on the space and time evolution of feature profiles during platinum etching in high-density argon plasmas is examined using simulations. The simulator takes into account redeposition resulting from either direct sticking of the sputtered species on the materials walls (line-of-sight redeposition) or from sputtered species returning from plasma (indirect redeposition). Overall, the simulator successfully reproduces experimental profiles sputter etched in platinum, in particular V-shaped profiles reported in literature. From comparison between experimental and simulated profiles at very low pressure, Pt/resist sticking probability was estimated to be 0.1 and the angular spread of the sputtered atom distribution was predicted to be about ±50°. It was further found that indirect redeposition becomes crucial at higher pressure for explaining the amount of redeposited matter.

Published in:

Journal of Applied Physics  (Volume:107 ,  Issue: 6 )