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Flexible picene thin film field-effect transistors with parylene gate dielectric and their physical properties

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10 Author(s)
Kawasaki, Naoko ; Research Laboratory for Surface Science, Okayama University, Okayama 700-8530, Japan ; Kalb, Wolfgang L. ; Mathis, Thomas ; Kaji, Yumiko
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Flexible picene thin film field-effect transistors (FETs) have been fabricated with parylene gate dielectric on polyethylene terephthalate substrates. The picene thin film FETs show p-channel output/transfer characteristics and the field-effect mobility μ reaches ∼1 cm2V-1s-1 in vacuum. The FET shows a clear O2 gas sensing effect and negligible hysteresis in the transfer curves, indicating a possible application of the transistor as O2 selective gas sensor. Furthermore, it has been found that the parylene gate dielectric can eliminate a reduction in on-state drain current caused by continuous bias-voltage application which is observed if a SiO2 gate dielectric is used.

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Applied Physics Letters  (Volume:96 ,  Issue: 11 )