Flexible picene thin film field-effect transistors with parylene gate dielectric and their physical properties

Flexible picene thin film field-effect transistors (FETs) have been fabricated with parylene gate dielectric on polyethylene terephthalate substrates. The picene thin film FETs show p-channel output/transfer characteristics and the field-effect mobility μ reaches ∼1 cm² V^-1 s^-1 in vacuum. The FET shows a clear O₂ gas sensing effect and negligible hysteresis in the transfer curves, indicating a possible application of the transistor as O₂ selective gas sensor. Furthermore, it has been found that the parylene gate dielectric can eliminate a reduction in on-state drain current caused by continuous bias-voltage application which is observed if a SiO₂ gate dielectric is used.