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An inductive kickback absorption scheme without a power Zener diode and a large capacitor is presented. Instead of using a power Zener diode and a large capacitor, the proposed scheme uses a control circuit to turn on power transistors available in an H-bridge to save die size, which are used to absorb the kickback energy. Furthermore, the proposed kickback voltage absorption scheme is capable of autoadjusting kickback voltage absorption as changing power supply. The proposed kickback absorption scheme has been realized on a 0.6- United Microelectronics Corporation (UMC) 18-V bipolar/CMOS/DMOS process. The test results demonstrate that the scheme could absorb the inductive kickback voltage rapidly and effectively.